Cypress Semiconductor Perform STK12C68 Instrukcja Użytkownika Strona 9

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STK12C68
Document Number: 001-51027 Rev. *G Page 9 of 22
Data Retention and Endurance
Parameter Description Min Unit
DATA
R
Data retention 100 Years
NV
C
Nonvolatile STORE operations 1,000 K
Capacitance
In the following table, the capacitance parameters are listed.
[6]
Parameter Description Test Conditions Max Unit
C
IN
Input capacitance T
A
= 25 C, f = 1 MHz,
V
CC
= 0 to 3.0 V
8pF
C
OUT
Output capacitance 7pF
Thermal Resistance
In the following table, the thermal resistance parameters are listed.
[6]
Parameter Description Test Conditions 28-SOIC
28-PDIP
(300 mil)
28-PDIP
(600 mil)
28-CDIP 28-LCC Unit
JA
Thermal resistance
(junction to ambient)
Test conditions follow
standard test methods and
procedures for measuring
thermal impedance, per EIA /
JESD51.
46.55 45.16 55.84 46.1 95.31 C/W
JC
Thermal resistance
(junction to case)
27.95 31.62 25.74 5.01 9.01 C/W
Figure 6. AC Test Loads
AC Test Conditions
5.0 V
Output
30 pF
R1 963
R2
512
5.0 V
Output
5 pF
R1 963
R2
512
For Tristate Specs
Input pulse levels....................................................0 V to 3 V
Input rise and fall times (10% to 90%).......................... <
5 ns
Input and output timing reference levels ...........................1.5
Note
6. These parameters are guaranteed by design and are not tested.
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