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72-Mbit QDR™-II SRAM 4-Word
Burst Architecture
CY7C1511JV18, CY7C1526JV18
CY7C1513JV18, CY7C1515JV18
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document Number: 001-12560 Rev. *C Revised March 10, 2008
Features
Separate independent read and write data ports
Supports concurrent transactions
300 MHz clock for high bandwidth
4-word burst for reducing address bus frequency
Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 600 MHz) at 300 MHz
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
Single multiplexed address input bus latches address inputs
for read and write ports
Separate port selects for depth expansion
Synchronous internally self-timed writes
QDR-II operates with 1.5 cycle read latency when the Delay
Lock Loop (DLL) is enabled
Operates like a QDR-I device with 1 cycle read latency in DLL
off mode
Available in x8, x9, x18, and x36 configurations
Full data coherency, providing most current data
Core V
DD
= 1.8 (± 0.1V); IO V
DDQ
= 1.4V to V
DD
Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)
Offered in both Pb-free and non Pb-free packages
Variable drive HSTL output buffers
JTAG 1149.1 compatible test access port
Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1511JV18 – 8M x 8
CY7C1526JV18 – 8M x 9
CY7C1513JV18 – 4M x 18
CY7C1515JV18 – 2M x 36
Functional Description
The CY7C1511JV18, CY7C1526JV18, CY7C1513JV18, and
CY7C1515JV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR-II architecture. QDR-II architecture consists
of two separate ports: the read port and the write port to access
the memory array. The read port has dedicated data outputs to
support read operations and the write port has dedicated data
inputs to support write operations. QDR-II architecture has
separate data inputs and data outputs to completely eliminate
the need to “turn-around” the data bus that exists with common
IO devices. Each port can be accessed through a common
address bus. Addresses for read and write addresses are
latched on alternate rising edges of the input (K) clock. Accesses
to the QDR-II read and write ports are completely independent
of one another. To maximize data throughput, both read and write
ports are equipped with DDR interfaces. Each address location
is associated with four 8-bit words (CY7C1511JV18), 9-bit words
(CY7C1526JV18), 18-bit words (CY7C1513JV18), or 36-bit
words (CY7C1515JV18) that burst sequentially into or out of the
device. Because data can be transferred into and out of the
device on every rising edge of both input clocks (K and K
and C
and C
), memory bandwidth is maximized while simplifying
system design by eliminating bus “turn-arounds”.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K
input clocks. All data outputs pass through output
registers controlled by the C or C
(or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Selection Guide
Description 300 MHz Unit
Maximum Operating Frequency 300 MHz
Maximum Operating Current x8 1090 mA
x9 1090
x18 1115
x36 1140
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Podsumowanie treści

Strona 1 - Burst Architecture

72-Mbit QDR™-II SRAM 4-WordBurst ArchitectureCY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Cypress Semiconductor Corporation • 198 Champion Cour

Strona 2

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 10 of 27Application ExampleFigure 1 shows four QDR-II used

Strona 3

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 11 of 27Write Cycle Descriptions The write cycle descripti

Strona 4

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 12 of 27Write Cycle DescriptionsThe write cycle descriptio

Strona 5

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 13 of 27IEEE 1149.1 Serial Boundary Scan (JTAG)These SRAMs

Strona 6

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 14 of 27IDCODEThe IDCODE instruction loads a vendor-specif

Strona 7

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 15 of 27TAP Controller State DiagramThe state diagram for

Strona 8

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 16 of 27TAP Controller Block DiagramTAP Electrical Charact

Strona 9

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 17 of 27TAP AC Switching Characteristics Over the Operatin

Strona 10 - CY7C1513JV18, CY7C1515JV18

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 18 of 27Identification Register Definitions Instruction Fi

Strona 11

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 19 of 27Boundary Scan Order Bit # Bump ID Bit # Bump ID Bi

Strona 12

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 2 of 27Logic Block Diagram (CY7C1511JV18)Logic Block Diagr

Strona 13

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 20 of 27Power Up Sequence in QDR-II SRAMQDR-II SRAMs must

Strona 14

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 21 of 27Maximum RatingsExceeding maximum ratings may impai

Strona 15

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 22 of 27CapacitanceTested initially and after any design o

Strona 16

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 23 of 27Switching CharacteristicsOver the Operating Range

Strona 17 - [+] Feedback

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 24 of 27Switching WaveformsFigure 3. Read/Write/Deselect

Strona 18

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 25 of 27Ordering Information Not all of the speed, package

Strona 19

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 26 of 27Package DiagramFigure 4. 165-ball FBGA (15 x 17 x

Strona 20 - Power Up Waveforms

Document Number: 001-12560 Rev. *C Revised March 10, 2008 Page 27 of 27QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by

Strona 21 - Operating Range

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 3 of 27Logic Block Diagram (CY7C1513JV18)Logic Block Diagr

Strona 22 - Thermal Resistance

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 4 of 27Pin ConfigurationThe pin configuration for CY7C1511

Strona 23

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 5 of 27CY7C1513JV18 (4M x 18)1234567891011A CQNC/144M A WP

Strona 24 - Switching Waveforms

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 6 of 27Pin Definitions Pin Name IO Pin DescriptionD[x:0]In

Strona 25

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 7 of 27CQ Echo Clock CQ is Referenced with Respect to C. T

Strona 26 - Package Diagram

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 8 of 27Functional OverviewThe CY7C1511JV18, CY7C1526JV18,

Strona 27

CY7C1511JV18, CY7C1526JV18CY7C1513JV18, CY7C1515JV18Document Number: 001-12560 Rev. *C Page 9 of 27Concurrent TransactionsThe read and write ports on

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